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Publisher ‏ : ‎ Bod – Books on Demand (July 14, 2017)
Language ‏ : ‎ English
Paperback ‏ : ‎ 154 pages
ISBN-10 ‏ : ‎ 3744867889
ISBN-13 ‏ : ‎ 978-3744867887
Item Weight ‏ : ‎ 6.8 ounces
Dimensions ‏ : ‎ 5.83 x 0.33 x 8.27 inches

Gate stack engineering is a critical aspect of developing emerging polarization-based non-volatile memories (NVMs). These memories, such as ferroelectric memories and spin-transfer torque magnetic memories, rely on the manipulation of polarization or spin states to store information. The gate stack, which consists of the dielectric layer and metal gate electrode, plays a crucial role in controlling and stabilizing these states.

One key challenge in gate stack engineering for polarization-based NVMs is achieving high endurance and retention while minimizing energy consumption. This requires careful selection of materials for the gate dielectric and electrode, as well as optimization of the interface between them. For example, high-k dielectrics are often used to reduce leakage currents and improve retention, while metal electrodes with high work functions can enhance writing and reading speeds.

Furthermore, gate stack engineering must also consider the impact of process variations and device scaling on device performance. As device dimensions shrink, the thickness of the gate dielectric and the quality of the interface become increasingly important. Advanced fabrication techniques, such as atomic layer deposition and plasma-enhanced chemical vapor deposition, are often employed to achieve precise control over these parameters.

Overall, gate stack engineering for emerging polarization-based NVMs is a complex and multidisciplinary field that requires expertise in materials science, device physics, and process engineering. By addressing these challenges, researchers can pave the way for the development of next-generation non-volatile memories with higher performance and reliability.
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