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Tag: Nonvolatile
Emerging Non-Volatile Memories by Seungbum Hong (English) Hardcover Book
Emerging Non-Volatile Memories by Seungbum Hong (English) Hardcover Book
Price : 136.30
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“Exploring the Future of Memory Storage: Seungbum Hong’s ‘Emerging Non-Volatile Memories’”Are you curious about the latest advancements in memory storage technology? Look no further than Seungbum Hong’s groundbreaking book, “Emerging Non-Volatile Memories.” In this comprehensive guide, Hong delves into the world of non-volatile memories, discussing the newest developments and potential applications in the field.
From Resistive Random Access Memory (RRAM) to Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM), Hong covers it all, providing insights into the advantages and challenges of each technology. Whether you’re a student, researcher, or industry professional, this book offers a deep dive into the future of memory storage.
With a focus on emerging technologies and real-world applications, “Emerging Non-Volatile Memories” is a must-read for anyone interested in the cutting-edge advancements shaping the future of information storage. Pick up your copy today and stay ahead of the curve in this rapidly evolving field.
#Emerging #NonVolatile #Memories #Seungbum #Hong #English #Hardcover #Book, Non-volatile memory
MB85RC256V Non-Volatile FRAM Breakout 256Kbit/32KByte Memory IC Tools I2C IIC-
MB85RC256V Non-Volatile FRAM Breakout 256Kbit/32KByte Memory IC Tools I2C IIC-
Price :4.90– 4.61
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Introducing the MB85RC256V Non-Volatile FRAM Breakout IC with 256Kbit/32KByte Memory and I2C Interface!Looking for a reliable and high-performance memory IC for your next project? Look no further than the MB85RC256V Non-Volatile FRAM Breakout IC. This versatile memory IC offers 256Kbit/32KByte of storage capacity, making it ideal for a wide range of applications.
One of the key features of this memory IC is its non-volatile nature, which means that data stored in the memory is retained even when power is removed. This makes it perfect for applications where data integrity is crucial.
The MB85RC256V also features an I2C interface, allowing for easy integration into existing systems. With its fast read and write speeds, this memory IC is perfect for applications that require quick and efficient data storage and retrieval.
Whether you’re working on a robotics project, IoT device, or any other electronic system that requires reliable and high-performance memory storage, the MB85RC256V Non-Volatile FRAM Breakout IC is the perfect choice. Get yours today and experience the power of FRAM technology!
#MB85RC256V #NonVolatile #FRAM #Breakout #256Kbit32KByte #Memory #Tools #I2C #IIC, Non-volatile memory
Logic Non-Volatile Memory : The NVM Solutions from Ememory, Hardcover by Hsu,…
Logic Non-Volatile Memory : The NVM Solutions from Ememory, Hardcover by Hsu,…
Price : 111.69
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Logic Non-Volatile Memory: The NVM Solutions from Ememory, Hardcover by HsuLooking for cutting-edge solutions in non-volatile memory technology? Look no further than Ememory’s latest offering, “Logic Non-Volatile Memory: The NVM Solutions” by renowned expert, Hardcover by Hsu. This comprehensive guide delves into the intricacies of non-volatile memory, providing in-depth analysis and practical applications for professionals in the field.
With Ememory’s expertise and Hardcover by Hsu’s insights, readers can expect a thorough exploration of the latest advancements in NVM technology. Whether you’re a seasoned professional or a newcomer to the field, this book is sure to provide valuable knowledge and guidance for your NVM projects.
Don’t miss out on this essential resource for understanding and implementing non-volatile memory solutions. Get your hands on “Logic Non-Volatile Memory: The NVM Solutions” today and stay ahead of the curve in this rapidly evolving field.
#Logic #NonVolatile #Memory #NVM #Solutions #Ememory #Hardcover #Hsu.., Non-volatile memory
Error Correction Codes for Non-Volatile Memories – 9789048178643
Error Correction Codes for Non-Volatile Memories – 9789048178643
Price :163.50– 131.18
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Error Correction Codes for Non-Volatile Memories – A Comprehensive GuideIn the world of non-volatile memories, ensuring data integrity is crucial. Errors can occur during data storage and transmission, leading to data corruption and loss. This is where error correction codes (ECC) come into play.
The book “Error Correction Codes for Non-Volatile Memories” by Rui Wang and Lei Ouyang provides a comprehensive guide to ECC techniques specifically designed for non-volatile memories. With an ISBN of 9789048178643, this book covers a wide range of ECC topics, including:
– Introduction to non-volatile memories and their challenges
– Basics of error detection and correction
– Various ECC techniques such as parity, Hamming codes, Reed-Solomon codes, and LDPC codes
– Implementation and optimization strategies for ECC in non-volatile memories
– Case studies and real-world applications of ECC in non-volatile memoriesWhether you are a researcher, engineer, or student working in the field of non-volatile memories, this book is a valuable resource for understanding and implementing ECC techniques to ensure data reliability and integrity.
Get your hands on “Error Correction Codes for Non-Volatile Memories” with ISBN 9789048178643 and dive into the world of ECC for non-volatile memories today!
#Error #Correction #Codes #NonVolatile #Memories, Non-volatile memory
Channel and Source Coding for Non-Volatile Flash Memories – 9783658289812
Channel and Source Coding for Non-Volatile Flash Memories – 9783658289812
Price :56.35– 47.68
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In this post, we will delve into the fascinating world of channel and source coding for non-volatile flash memories. The book “Channel and Source Coding for Non-Volatile Flash Memories” provides a comprehensive overview of the latest advancements in this field, offering a valuable resource for researchers, engineers, and students interested in understanding the intricacies of data storage and retrieval in flash memories.The book covers topics such as error correction coding, data compression, and signal processing techniques specifically tailored for non-volatile flash memories. It explores the challenges and opportunities in designing efficient coding schemes to enhance the reliability and performance of flash memory systems.
With the exponential growth of data storage demands in various applications, the importance of effective channel and source coding techniques for flash memories cannot be overstated. This book sheds light on the cutting-edge research and developments in this area, providing insights into the future trends and possibilities for enhancing the storage capabilities of flash memories.
Whether you are a seasoned professional or a curious student eager to learn more about the intricacies of flash memory technology, “Channel and Source Coding for Non-Volatile Flash Memories” is a must-read resource that will deepen your understanding of this ever-evolving field. Grab your copy today and embark on a journey to uncover the secrets of channel and source coding for non-volatile flash memories.
#Channel #Source #Coding #NonVolatile #Flash #Memories, Non-volatile memory
Non-volatile Cbram/Mim Switching Technology for Electronically Reconfigurable…
Non-volatile Cbram/Mim Switching Technology for Electronically Reconfigurable…
Price :169.95– 164.56
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Non-volatile Cbram/Mim Switching Technology for Electronically Reconfigurable Memory DevicesIn the ever-evolving field of electronics, the demand for memory devices that are not only fast and efficient but also electronically reconfigurable has been steadily increasing. One promising technology that is gaining traction in this space is non-volatile Cbram/Mim switching technology.
Cbram, or conductive bridging random access memory, and Mim, or metal-insulator-metal, are two types of memory technologies that have shown great potential in achieving high-speed, low-power memory devices. When combined, they form a powerful solution for creating non-volatile memory devices that can be easily reconfigured electronically.
One of the key advantages of Cbram/Mim switching technology is its ability to retain data even when power is turned off, making it ideal for applications where data persistence is crucial. Additionally, this technology offers fast switching speeds and low power consumption, making it suitable for a wide range of applications, from consumer electronics to data centers.
Overall, non-volatile Cbram/Mim switching technology holds great promise for the future of memory devices, offering a potent combination of speed, efficiency, and reconfigurability. As research and development in this area continue to advance, we can expect to see even more innovative and versatile memory solutions emerging in the market.
#Nonvolatile #CbramMim #Switching #Technology #Electronically #Reconfigurable.., Non-volatile memory
Design Exploration of Emerging Nano-scale Non-volatile Memory by Hao Yu (English
Design Exploration of Emerging Nano-scale Non-volatile Memory by Hao Yu (English
Price : 139.74
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Design Exploration of Emerging Nano-scale Non-volatile Memory by Hao YuIn a world where data storage and retrieval are becoming increasingly important, the development of non-volatile memory technologies has become a key area of research. One emerging technology that shows promise in this field is nano-scale non-volatile memory.
In a recent study conducted by Hao Yu, a researcher at the forefront of nanotechnology, the design exploration of nano-scale non-volatile memory was examined in depth. This research delves into the potential applications and benefits of utilizing nanoscale materials for non-volatile memory storage.
By leveraging the unique properties of nano-scale materials, such as their high surface area and low power consumption, Yu’s research suggests that nano-scale non-volatile memory could revolutionize data storage capabilities. This technology has the potential to significantly increase data storage capacity, improve data retrieval speeds, and enhance overall system performance.
Yu’s work highlights the importance of continued innovation in non-volatile memory technologies, particularly at the nano-scale level. As data storage needs continue to grow exponentially, the development of new and advanced memory technologies will be crucial to meeting these demands.
Overall, the design exploration of emerging nano-scale non-volatile memory by Hao Yu offers exciting possibilities for the future of data storage. With further research and development, nano-scale non-volatile memory could soon become a vital component in the next generation of data storage solutions.
#Design #Exploration #Emerging #Nanoscale #Nonvolatile #Memory #Hao #English, Non-volatile memory
Non-Volatile In-Memory Computing by Spintronics by Hao Yu (English) Paperback Bo
Non-Volatile In-Memory Computing by Spintronics by Hao Yu (English) Paperback Bo
Price : 71.89
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Title: Non-Volatile In-Memory Computing by Spintronics by Hao YuAre you interested in the cutting-edge technology of non-volatile in-memory computing? Look no further than “Non-Volatile In-Memory Computing by Spintronics” by Hao Yu.
This book delves into the exciting world of spintronics, a field that combines electronics and magnetism to create devices that can store and process information without the need for power. With non-volatile memory becoming increasingly important in the era of big data and artificial intelligence, spintronics offers a promising solution for faster, more energy-efficient computing.
In this comprehensive guide, Hao Yu explores the fundamentals of spintronics and its potential applications in in-memory computing. From magnetic tunnel junctions to domain wall devices, readers will gain a deep understanding of the latest developments in the field.
Whether you’re a researcher, engineer, or simply curious about the future of computing, “Non-Volatile In-Memory Computing by Spintronics” is a must-read. Pick up your copy in paperback today and dive into the fascinating world of spintronics.
#NonVolatile #InMemory #Computing #Spintronics #Hao #English #Paperback, Non-volatile memory
Gate Stack Engineering for Emerging Polarization based Non-volatile Memories
Gate Stack Engineering for Emerging Polarization based Non-volatile Memories
Price :25.61– 23.33
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As technology continues to advance, the demand for faster, more efficient non-volatile memories (NVMs) is increasing. One emerging technology that shows great promise in this area is polarization-based NVMs. These memories utilize the inherent properties of ferroelectric materials to store data, offering advantages such as low power consumption, high speed, and high endurance.One key aspect of developing polarization-based NVMs is gate stack engineering. The gate stack is a critical component of the memory cell that controls the flow of electric current and stores the polarization state of the ferroelectric material. By optimizing the materials and design of the gate stack, researchers can improve the performance and reliability of polarization-based NVMs.
There are several challenges to overcome in gate stack engineering for polarization-based NVMs. For example, researchers must carefully select materials with the right properties to ensure that the gate stack can reliably switch between different polarization states. Additionally, the design of the gate stack must be optimized to minimize leakage currents and ensure long-term data retention.
Overall, gate stack engineering is a crucial aspect of developing polarization-based NVMs for the next generation of memory technology. By tackling the challenges in this area, researchers can unlock the full potential of these promising memories and pave the way for faster, more efficient data storage solutions.
#Gate #Stack #Engineering #Emerging #Polarization #based #Nonvolatile #Memories, Non-volatile memory
Silicon Non-Volatile Memories: Paths of Innovation by Barbara de Salvo (English)
Silicon Non-Volatile Memories: Paths of Innovation by Barbara de Salvo (English)
Price : 187.82
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Silicon Non-Volatile Memories: Paths of Innovation by Barbara de SalvoIn her groundbreaking research paper, “Silicon Non-Volatile Memories: Paths of Innovation,” renowned scientist Barbara de Salvo explores the latest advancements in non-volatile memory technology. With a focus on silicon-based memory solutions, de Salvo delves into the various paths of innovation that are shaping the future of data storage.
From NAND flash memory to emerging technologies like Resistive RAM (ReRAM) and Phase Change Memory (PCM), de Salvo provides an in-depth analysis of the current landscape of non-volatile memories. By examining the challenges and opportunities presented by each technology, she offers valuable insights into how these innovations can revolutionize the way we store and access data.
With a keen eye for detail and a deep understanding of the complexities of semiconductor technology, de Salvo’s research sheds light on the key trends and developments driving the evolution of non-volatile memories. Whether you’re a seasoned industry professional or a curious enthusiast, “Silicon Non-Volatile Memories: Paths of Innovation” is a must-read for anyone interested in the cutting-edge world of memory storage.
#Silicon #NonVolatile #Memories #Paths #Innovation #Barbara #Salvo #English, Non-volatile memory
