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Tag: Nonvolatile
VLSI-Design of Non-Volatile Memories
Price: $239.33
(as of Nov 22,2024 11:56:16 UTC – Details)
Publisher : Springer; 2005th edition (January 18, 2005)
Language : English
Hardcover : 740 pages
ISBN-10 : 354020198X
ISBN-13 : 978-3540201984
Item Weight : 5 pounds
Dimensions : 6.14 x 1.31 x 9.21 inches
Non-volatile memories are essential components in modern electronic devices, storing data even when the power is turned off. In this post, we will delve into the VLSI design of non-volatile memories, exploring the key considerations and challenges in creating these crucial components.1. Memory Types: Non-volatile memories come in various types, such as Flash, EEPROM, and MRAM. Each type has its own unique characteristics and design considerations, making it crucial to choose the right type for the specific application.
2. Size and Density: One of the key challenges in VLSI design of non-volatile memories is achieving high memory density while minimizing the chip area. This involves careful layout and optimization of memory cells to pack more data in a smaller space.
3. Read and Write Speeds: Non-volatile memories need to have fast read and write speeds to ensure efficient data storage and retrieval. VLSI designers must optimize circuitry and access mechanisms to achieve the desired performance levels.
4. Power Consumption: Power consumption is a critical factor in the design of non-volatile memories, especially for battery-powered devices. VLSI designers must implement power-saving techniques such as low-power modes and efficient data management algorithms.
5. Reliability and Endurance: Non-volatile memories need to be reliable and durable, with high endurance to withstand repeated read and write cycles. VLSI designers must implement error correction codes and wear-leveling algorithms to enhance memory reliability and longevity.
In conclusion, the VLSI design of non-volatile memories is a complex and challenging task that requires careful consideration of various factors such as memory type, size, speed, power consumption, and reliability. By addressing these key considerations, VLSI designers can create efficient and reliable non-volatile memories for a wide range of electronic devices.
#VLSIDesign #NonVolatile #Memories
The Future of Non-volatile Memory: Trends and Innovations
Non-volatile memory technology has seen significant advancements in recent years, paving the way for exciting developments in the future. Non-volatile memory, unlike volatile memory such as RAM, retains data even when power is turned off, making it an essential component in a wide range of electronic devices, from smartphones to data centers.One of the most prominent trends in non-volatile memory technology is the continued development of NAND flash memory. NAND flash memory is widely used in solid-state drives (SSDs) due to its high speed and reliability. Innovations in NAND flash memory technology, such as the introduction of 3D NAND, which stacks memory cells vertically to increase storage capacity, have led to significant improvements in storage density and performance. As a result, SSDs have become increasingly popular in consumer electronics and data centers, offering faster boot times and improved data access speeds.
Another key trend in non-volatile memory technology is the emergence of new memory technologies, such as resistive random-access memory (ReRAM) and phase-change memory (PCM). These emerging technologies offer potential advantages over traditional NAND flash memory, including faster write speeds, lower power consumption, and increased endurance. ReRAM, for example, uses a different mechanism to store data than NAND flash memory, allowing for faster write speeds and lower power consumption. PCM, on the other hand, uses a material that can switch between amorphous and crystalline states to store data, offering high endurance and fast read and write speeds.
In addition to advancements in existing non-volatile memory technologies, researchers are also exploring new materials and structures for next-generation memory devices. One promising area of research is the development of memristors, which are a type of resistive memory device that can store and process data simultaneously. Memristors have the potential to revolutionize computing by enabling new types of memory and computing architectures that are more efficient and faster than current technologies.
Overall, the future of non-volatile memory looks bright, with continued advancements in NAND flash memory technology, the emergence of new memory technologies such as ReRAM and PCM, and ongoing research into next-generation memory devices like memristors. These innovations are likely to drive further improvements in storage capacity, performance, and energy efficiency, making non-volatile memory an essential component of future electronic devices. As technology continues to evolve, non-volatile memory will play a crucial role in enabling new applications and driving innovation in the digital age.
HP 2SFF Factor PCIe Non-Volatile Memory Express NVMe For DL380 P/N: 875080-001
HP 2SFF Factor PCIe Non-Volatile Memory Express NVMe For DL380 P/N: 875080-001
Price : 99.99
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Introducing the HP 2SFF Factor PCIe Non-Volatile Memory Express NVMe For DL380 P/N: 875080-001Are you looking to enhance the performance and storage capacity of your HP DL380 server? Look no further than the HP 2SFF Factor PCIe Non-Volatile Memory Express NVMe. This cutting-edge storage solution is designed to provide lightning-fast data transfer speeds, improved reliability, and increased efficiency for your server.
With a compact 2SFF factor design, this NVMe drive fits seamlessly into your DL380 server without taking up unnecessary space. The PCIe interface ensures quick and easy installation, allowing you to upgrade your storage capacity in minutes.
Say goodbye to slow data transfer speeds and hello to improved performance with the HP 2SFF Factor PCIe NVMe. Whether you’re handling large datasets, running complex applications, or storing critical business data, this drive delivers the speed and reliability you need to keep your server running smoothly.
Upgrade your HP DL380 server with the HP 2SFF Factor PCIe Non-Volatile Memory Express NVMe today and experience the difference for yourself. Order yours now and take your server performance to the next level.
#2SFF #Factor #PCIe #NonVolatile #Memory #Express #NVMe #DL380
MB85RC256V I2C Non-Volatile FRAM Breakout Memory 32KB I2C FRAM Breakout Board
Price: $11.63
(as of Nov 22,2024 08:36:55 UTC – Details)
FRAM is non-volatile and can easily be read/written 10 trillion times.
Item model number : Keensoyucxindhqe
Date First Available : June 19, 2019
Manufacturer : Keenso
ASIN : B07T98C3XY
Country of Origin : China➹【Easy to read data】–FRAM is non-volatile and can be easily read/written 10 trillion times.
➹【Dynamic Storage】–The Fram Breakout is similar to Dynamic Random Access Memory (DRAM), using only the ferroelectric layer instead of the dielectric layer.
➹【Buffered Data】– Non-Volatile FRAM Breakout is especially suitable for low-power data loggers and buffers data without a stable voltage source.
➹【Good Chip】 — The FRAM chip used by the FRAM Breakout Board provides 8 KB of memory and uses clocks up to 20 MHz.
➹【Save for a long time】 — Each byte of the FRAM Breakout Board can be read and written immediately, but it will be stored for 95 years at room temperature.
Introducing the MB85RC256V I2C Non-Volatile FRAM Breakout Memory – A 32KB I2C FRAM Breakout BoardLooking for a reliable and high-performance memory solution for your next project? Look no further than the MB85RC256V I2C Non-Volatile FRAM Breakout Memory! This breakout board features a 32KB Ferroelectric RAM (FRAM) memory chip that offers fast read and write speeds, low power consumption, and non-volatile data retention.
With an I2C interface, this FRAM breakout board is easy to integrate into your existing projects and can be easily controlled by a microcontroller or single-board computer. The non-volatile nature of FRAM means that your data will be retained even when the power is removed, making it ideal for applications where reliability is crucial.
Whether you’re working on a data logging project, IoT device, or any other application that requires fast and reliable non-volatile memory, the MB85RC256V I2C FRAM Breakout Board is the perfect choice. Get yours today and take your projects to the next level!
#MB85RC256V #I2C #NonVolatile #FRAM #Breakout #Memory #32KB #I2C #FRAM #Breakout #Board
Non-Volatile Memory Technologies 1990 Short Course Eitan, Caywood, Lai, Shepard
Non-Volatile Memory Technologies 1990 Short Course Eitan, Caywood, Lai, Shepard
Price : 48.89
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Non-Volatile Memory Technologies 1990 Short Course: A Look Back at Eitan, Caywood, Lai, and ShepardIn 1990, a short course on non-volatile memory technologies brought together some of the brightest minds in the field. Among the speakers were Eliyahou Harari (Eitan), Larry Caywood, Yiran Lai, and Thomas Shepard, each of whom made significant contributions to the development of non-volatile memory technologies.
Eliyahou Harari, also known as Eli, was a pioneer in the development of flash memory technology. He co-founded SanDisk Corporation in 1988 and played a key role in the commercialization of flash memory, which has since become a ubiquitous technology in consumer electronics.
Larry Caywood, a researcher at IBM, made important contributions to the development of magnetic random-access memory (MRAM) technology. MRAM is a non-volatile memory technology that offers fast read and write speeds, high endurance, and low power consumption, making it an attractive alternative to traditional memory technologies.
Yiran Lai, a researcher at Intel, focused on phase change memory (PCM) technology. PCM uses materials that can switch between amorphous and crystalline states to store data, offering high speed, high density, and low power consumption. Lai’s work helped to advance the development of PCM as a viable non-volatile memory technology.
Thomas Shepard, a researcher at Hewlett-Packard, was a pioneer in the development of memristor technology. Memristors are a type of non-volatile memory technology that can store information by changing their resistance, offering high speed, high density, and low power consumption. Shepard’s work laid the foundation for the commercialization of memristor technology.
The 1990 short course on non-volatile memory technologies provided a platform for these researchers to share their insights and collaborate on advancing the field. Today, their contributions continue to shape the development of non-volatile memory technologies, driving innovation and progress in the electronics industry.
#NonVolatile #Memory #Technologies #Short #Eitan #Caywood #Lai #Shepard
Understanding the Different Types of Non-volatile Memory
Non-volatile memory is a type of computer memory that retains stored information even when power is turned off. This is in contrast to volatile memory, which requires power to maintain the stored data. Non-volatile memory is commonly used in devices such as computers, phones, cameras, and other electronic devices to store important data that needs to be preserved even when the device is turned off.There are several different types of non-volatile memory, each with its own unique characteristics and applications. Understanding the different types of non-volatile memory can help consumers and businesses make informed decisions when choosing storage solutions for their devices.
One of the most common types of non-volatile memory is flash memory. Flash memory is a type of solid-state storage that uses electrically erasable programmable read-only memory (EEPROM) cells to store data. Flash memory is commonly used in USB drives, memory cards, and solid-state drives (SSDs) due to its high speed and durability. Flash memory can be further categorized into NAND and NOR flash memory, each with its own advantages and disadvantages.
Another type of non-volatile memory is magnetic storage, which includes hard disk drives (HDDs) and magnetic tapes. Magnetic storage uses magnetic fields to store data on a rotating disk or tape. HDDs are commonly used in computers and servers for long-term storage of large amounts of data, while magnetic tapes are used for archival purposes.
Phase-change memory (PCM) is a newer type of non-volatile memory that uses a material that can change phases between amorphous and crystalline states to store data. PCM offers fast read and write speeds and high endurance, making it suitable for applications that require frequent data access.
Memristor is another emerging type of non-volatile memory that uses a resistor with memory capabilities to store data. Memristors are still in the early stages of development but show promise for future applications in memory and storage devices.
Understanding the different types of non-volatile memory can help consumers and businesses choose the right storage solution for their needs. Whether it’s flash memory for high-speed data access, magnetic storage for long-term storage, or emerging technologies like PCM and memristors, there are a variety of options available to meet specific requirements. By staying informed about the latest advancements in non-volatile memory technology, users can take advantage of the benefits of reliable and durable storage solutions for their devices.
SparkFun Qwiic EEPROM Breakout – 512Kbit – Extra Storage Space for Any Project – Three Address Jumpers – Write Protection – Non-Volatile Memory – Qwiic connectors no Soldering Required
Price: $6.95
(as of Nov 22,2024 05:51:55 UTC – Details)
The SparkFun Qwiic EEPROM Breakout is a simple & cost effective option to add some extra storage space to any project. With 512 kilo-bits (or 64 kilo-bytes) of storage, this product is great for any microcontroller that doesn’t have any EEPROM storage space, like the SAMD21. You can use the Qwiic EEPROM for storing data like GPS waypoints & other user settings that need to be maintained between sketch uploads. The SparkFun Qwiic EEPROM has three address jumpers, allowing for up to eight EEPROMs on one bus. All communication is enacted exclusively via I2C, utilizing our handy Qwiic system (as the name implies). However, we still have broken out 0.1″ spaced pins in case you prefer to use a breadboard.The on-board CAT24C512 IC is a 512Kb EEPROM flash memory, organized as 65,536 words of 8 bits each with a 128-byte page write buffer. An on board ECC (Error Correction Code) makes this EEPROM suitable for high reliability applications. The IC also offers write protection, which inhibits write operations by pulling the WP pin High (protects the entire memory). The external address pins make it possible to connect up to eight CAT24C512 EEPROM chips on the same I2C bus.
We’ve also made sure to write a compatible with Arduino library to make using this & any EEPROM easy to use. Check it out by searching ‘SparkFun EEPROM’ from the library manager or by downloading the repo directly.
Note: The I2C address of the EEPROM – 512Kbit is 0x50 & is jumper selectable to 0x51, 0x52, 0x53, 0x54, 0x55, 0x56, or 0x57. A multiplexer/Mux is required to communicate to multiple EEPROM – 512Kbit sensors on a single bus. If you need to use more than one EEPROM Breakout consider using the Qwiic Mux Breakout.
The SparkFun Qwiic Connect System is an ecosystem of I2C sensors, actuators, shields & cables that make prototyping faster & less prone to error. All Qwiic-enabled boards use a common 1mm pitch, 4-pin JST connector. This reduces the amount of required PCB space, & pol
Maybe your project needs to store data, like a public-key, in non-volatile memory? Maybe you want to use multiple boards as configuration keys with different default settings for your project?
The SparkFun Qwiic EEPROM Breakout is a simple and cost effective option to add some extra storage space to any project. With 512 kilo-bits (or 64 kilo-bytes) of storage, this product is great for any microcontroller that doesn’t have any EEPROM storage space, like the SAMD21.
You can use the Qwiic EEPROM for storing data like GPS waypoints and other user settings that need to be maintained between sketch uploads. The SparkFun Qwiic EEPROM has three address jumpers, allowing for up to eight EEPROMs on one bus. All communication is enacted exclusively via I2C, utilizing our handy Qwiic system (as the name implies).
The on-board CAT24C512 IC is a 512Kb EEPROM flash memory, organized as 65,536 words of 8 bits each with a 128-byte page write buffer. An on board ECC (Error Correction Code) makes this EEPROM suitable for high reliability applications.
Features: Power: 3.3V; CAT24C512 EEPROM: Supply Current: Read Current: 1mA, Write Current: 1.8mA – 2.5mA, Memory: 512-Kb (kilobit), Page Write Buffer: 128 bytes, Reliability: Endurance: 1,000,000 Program/Erase Cycles, Data Retention: 100 Years, Write Protection, I2C Address (7-bit):, 0x50 (Default), 0x51, 0x52, 0x53, 0x54, 0x55, 0x56, 0x57, 2x Qwiic Connectors Note: EEPROM board only. No cables or microcontroller included.
Introducing the SparkFun Qwiic EEPROM Breakout – 512Kbit!Are you looking to add extra storage space to your next project, without the hassle of soldering? Look no further than the SparkFun Qwiic EEPROM Breakout. This breakout board features 512Kbit of non-volatile memory, perfect for storing data or settings for your project.
One of the standout features of this breakout board is the three address jumpers, allowing you to easily change the I2C address of the EEPROM. This makes it simple to connect multiple EEPROMs to your project without any conflicts.
In addition, the SparkFun Qwiic EEPROM Breakout also includes write protection, giving you the peace of mind that your data is safe from accidental overwriting. With Qwiic connectors, no soldering is required, making it easy to connect to your Qwiic-enabled project.
Whether you’re building a data logger, storing configuration settings, or just need some extra storage space, the SparkFun Qwiic EEPROM Breakout is the perfect solution. Upgrade your project today with the SparkFun Qwiic EEPROM Breakout – 512Kbit!
#SparkFun #Qwiic #EEPROM #Breakout #512Kbit #Extra #Storage #Space #Project #Address #Jumpers #Write #Protection #NonVolatile #Memory #Qwiic #connectors #Soldering #Required
Non-Volatile Memory Devices; 1993 Date Book
Non-Volatile Memory Devices; 1993 Date Book
Price : 10.00
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Non-Volatile Memory Devices: 1993 Date BookIn the world of technology, non-volatile memory devices play a crucial role in storing data without the need for a constant power supply. One such device that was making waves in 1993 was the Date Book, a portable electronic organizer that revolutionized the way people managed their schedules and tasks.
The Date Book was a handheld device that featured a built-in calendar, address book, to-do list, and memo pad, allowing users to keep track of their appointments and important information on the go. With its non-volatile memory storage, users could rest assured that their data would be safe even if the device lost power.
The Date Book quickly became a must-have gadget for busy professionals, students, and anyone looking to stay organized. Its compact size, user-friendly interface, and long battery life made it a popular choice for those seeking a convenient way to manage their daily lives.
Although the Date Book may seem outdated in today’s world of smartphones and tablets, it paved the way for the development of more advanced non-volatile memory devices that continue to shape the way we store and access information.
So here’s to the Date Book, a pioneering non-volatile memory device that left a lasting impact on the world of technology in 1993 and beyond.
#NonVolatile #Memory #Devices #Date #Book
The Evolution of Non-volatile Memory Technology
Non-volatile memory technology has come a long way since its inception, with significant advancements being made in recent years. Non-volatile memory, as the name suggests, is a type of memory that retains its data even when the power is turned off. This makes it an essential component in a wide range of devices, including computers, smartphones, and digital cameras.The evolution of non-volatile memory technology can be traced back to the 1950s, when the first commercially available non-volatile memory device, the magnetic core memory, was introduced. This technology used tiny magnetic cores to store data, and while it was reliable and durable, it was also bulky and expensive.
In the 1970s, the invention of the EEPROM (Electrically Erasable Programmable Read-Only Memory) brought about a new era in non-volatile memory technology. EEPROMs could be erased and reprogrammed electrically, making them more versatile and easier to use than their predecessors. However, they were still relatively slow and had limited endurance.
The 1980s saw the introduction of flash memory, which revolutionized non-volatile memory technology. Flash memory is a type of EEPROM that can be erased and reprogrammed in blocks, rather than individual bytes. This made it faster and more efficient than traditional EEPROMs, and it quickly became the go-to choice for many electronic devices.
In recent years, there have been further advancements in non-volatile memory technology, with the introduction of technologies such as NAND and NOR flash memory, MRAM (Magnetoresistive Random Access Memory), and 3D XPoint. These technologies offer even faster speeds, higher capacities, and lower power consumption, making them ideal for use in a wide range of applications.
One of the most significant developments in non-volatile memory technology in recent years has been the introduction of 3D NAND flash memory. This technology stacks memory cells vertically, rather than horizontally, allowing for higher storage capacities and faster speeds. 3D NAND flash memory is now used in a wide range of devices, from smartphones to data centers, and is expected to continue to drive innovation in the non-volatile memory market.
Overall, the evolution of non-volatile memory technology has been marked by significant advancements in speed, capacity, and efficiency. As demand for faster and more powerful devices continues to grow, it is likely that we will see even more innovations in non-volatile memory technology in the years to come.
HiLetgo 2pcs MB85RC256V Memory IC 32KB Development Tools FRAM Breakout Board I2C Non-Volatile FRAM Breakout Board for IoT Sensor Devices
Price: $13.99
(as of Nov 22,2024 03:08:34 UTC – Details)
Features:
FRAM is non-volatile and can easily be read/written 10 trillion times.
It’s similar to Dynamic random-access memory (DRAM), with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 8 KB of memory, and with a clock up to 20 MHz.
Each byte can be read and written instantaneously, and the memory can be kept for long term at room temperature.
Specification:
Address: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V
Package List:
2 x MB85RC256V FRAM Breakout Board
Package Dimensions : 1.18 x 1.18 x 0.2 inches; 0.16 ounces
Date First Available : August 7, 2023
Manufacturer : HiLetgo
ASIN : B0CF4L3XVF
Country of Origin : ChinaMB85RC256V Memory IC 32KB Development tool
I2C Non-Volatile FRAM Breakout Board
Each byte can be read and written instantaneously
Are you looking for a reliable memory IC for your IoT sensor devices? Look no further than the HiLetgo 2pcs MB85RC256V Memory IC 32KB Development Tools FRAM Breakout Board! This breakout board features non-volatile FRAM technology, making it ideal for storing data in IoT applications where power loss may occur.With an I2C interface, this breakout board is easy to integrate into your existing projects. Plus, with 32KB of memory, you’ll have plenty of space to store sensor data and other important information.
Don’t let unreliable memory ICs hold back your IoT projects. Upgrade to the HiLetgo 2pcs MB85RC256V Memory IC 32KB Development Tools FRAM Breakout Board today and ensure your data is safe and secure.
#HiLetgo #2pcs #MB85RC256V #Memory #32KB #Development #Tools #FRAM #Breakout #Board #I2C #NonVolatile #FRAM #Breakout #Board #IoT #Sensor #Devices
